[18p-B203-1~17] 3.13 Semiconductor optical devices

[18p-B203-13] Study on band offsets between Si/IV-VI semiconductor interfaces for the application to mid-infrared laser diodes on Si substrate

〇Akihiro Ishida¹, Toshiki Yamagishi¹, Shota Inaba¹, Seisuke Nakashima¹ (1.Shizuoka Univ.)

Keywords:mid-infrared laser, IV-VI semiconductor, heterojunction

To develop IV-VI mid-infrared lasers on Si substrate, it is necessary to develop low resistivity Si/IV-VI semiconductor interface by clarifying the band offsets of the heterojunctions. In Si/PbTe interface, it is expected that the heterojunction becomes type-II where conduction band bottom of the PbTe situates below the valence band top of Si. Current-voltage properties and band offsets of Si/PbTe, Si/PbS, and Si/SnTe interface will be discussed.