[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-B301-1] Characterization of Near-Interface Oxide Traps with the Charge Pumping Method

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:near-interface oxide traps, charge pumping method, single traps

We have established a systematic characterization method of interface traps using charge pumping (CP) technique, and succeeded in evaluation of single interface traps and clarified their essential nature. Moreover, we have corrected fundamentally the conventional CP theory. Based on these findings, we carried out detection and characterization of near-interface oxide traps (NIOT) in this study, and clarified that each NIOT has two energy levels as in the case of interface traps.