〇Takuya Imagawa¹, Akio Ohta¹, Noriyuki Taoka², Nobuyuki Fujimura¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi MIyazaki¹ (1.Nagoya Univ, 2.AIST GaN-OIL)

1:30 PM - 1:45 PM

[18p-B301-3] Evaluation of charge-up on surface of SiO₂ deposited by plasma CVD with XPS to investigate self-compensation mechanism of charge-up on dielectric surfaces

〇(B)Kota Ushimaru^1,2, Takahiro Harie^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda univ., 2.ISAS/JAXA)

1:45 PM - 2:00 PM

[18p-B301-4] Observation of Si valence electron scattering by inelastic angle-resolved photoelectron spectroscopy

〇Sakura-Nishino Takeda¹, Kazuho Morita¹, Hiroshi Daimon¹ (1.NAIST)

2:15 PM - 2:30 PM

[18p-B301-5] Evaluation of trace metal contamination in SiO₂ by Pulse Photoconductivity Method

〇(M1)Shotaro Kuzukawa¹, Takahiro Ono¹, Tatsuro Kawano¹, Hiroki Matsuyama¹, Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka², Moriya Miyashita³, Takahiro Maeta³ (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ., 3.GlobalWafers Japan)

2:30 PM - 2:45 PM

[18p-B301-6] Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Takahiro Ono¹, Tatsuro Kawano¹, Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Yamato Murakami², Takuya Yamamoto², Kaito Kashiwagi², Kazuhiro Kobayashi², Masao Yoshioka², Tsuyoshi Hashishin², Hiroshi Kubota² (1.GSST Kumamoto Univ, 2.Kumamoto Univ)

2:45 PM - 3:00 PM

[18p-B301-7] Influence of VPT-Induced Trace Particles on Sensitivity in TXRF Measurements (2)

〇Rikiichi Ohno¹ (1.Sony Semiconductor Solutions)

3:00 PM - 3:15 PM

[18p-B301-8] Development of trace metal analysis on a silicon wafer surface

〇Syuhei Yonezawa¹, Kazuya Dobashi¹, Shigeyuki Iwai¹, tatsuya Ichinose², Takashi Sakaguchi² (1.TokyoElectron, 2.IAS Inc.)

3:15 PM - 3:30 PM

[18p-B301-9] Development of Alkaline Solution generated by Electrolysis of Organic Ammonium Salt for Wet and Cleaning Process in Semiconductor Manufacturing

〇Masaaki Hirakawa¹, Hideaki Hirabayashi², Yuji Nagashima³ (1.Toshiba, 2.Toshiba Materials, 3.Shibaura Mechatronics)

3:30 PM - 3:45 PM

[18p-B301-10] Electrostatic Discharge Prevention in the Ultra-Pure Water Spray Cleaning of Semiconductor Chips using Induction Charging.
(2^nd Report; Consideration with Position and Shape of an Inductive charge device)

〇Yoshiyuki Seike¹, Hayato Watanabe¹, Syogo Miyagawa¹, Tatsuo Mori¹, Taishi Segawa², Yoshinori Kobayashi², Keiji Miyachi², Masahiko Amari² (1.Aichi Inst. Tech., 2.Asahi Sunac)

Poster presentation

[18p-P12-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 4:00 PM - 6:00 PM P12 (P)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

4:00 PM - 6:00 PM

[18p-P12-1] Photoluminescence Study of Si/SiO₂ Nano-wall Arrays

〇Masakazu Hirai¹, Makoto Konagai¹, Yukimi Ichikawa¹ (1.TOKYO CITY Univ.)

4:00 PM - 6:00 PM

[18p-P12-2] Persistent Homology Analysis of Amorphous SiO₂ Thin Film

〇Chong Zheng¹, Takuya Terada¹, Motohiro Tomita^1,2, Takanobu Watanabe¹, Akira Koyama¹ (1.Waseda Univ., 2.JSPS Research Fellow)

4:00 PM - 6:00 PM

[18p-P12-3] Correlation between formation condition of AlOx thin film by spin-coating and carrier lifetime

〇(B)Yuya Nakazawa¹, Yuichi Haruyama², Hiroyuki Kanda¹, Naoyuki Shibayama¹, Uzum Abdullah³, Seigo Ito¹ (1.Univ. of Hyogo, 2.LASTI, Univ. of Hyogo, 3.Karadeniz Tec. Univ.)

4:00 PM - 6:00 PM

[18p-P12-4] Development of Brush Scrubbing for Ultra-fine particle cleaning

〇Takahiro Hamada¹ (1.R&D)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18a-B301-1] Transport Simulation of 1D Nanostructures considring the Electron-Phonon Interaction

[18a-B301-2] Effects of Band Tails Caused by Impurities in Nanowires on Performance of Tunneling FETs

[18a-B301-3] Effects of Heavy-ion irradiation on SOI-CMOS devices with SiGe for Source/Drain

△ [18a-B301-4] Improvements of PERC Solar Cell Performances with TCAD Simulation

[18a-B301-5] Implementation of sc-DFT method to PHASE/0 and its application to accurate band gap calculations of semiconductors

[18a-B301-6] Electronic structure prediction of oxygen vacancy in Si/SiO₂ by first principle calculation

[18a-B301-7] Metal-atom diffusion at metal/SiO₂ interfaces in electric field; First principles study

△ [18a-B301-8] Molecuar dynamics simulation of solid phase epitaxy of Si

△ [18a-B301-9] Enhanced Etching of Ge Surfaces Assisted by Reduced Graphene Oxide and Its Mechanism

▼ [18a-B301-10] A study on the stability of Pd₂Si formed by RF magnetron sputtering

△ [18a-B301-11] Improvement of retention characteristics utilizing Hf-based MONOS nonvolatile memory

[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-B301-1] Characterization of Near-Interface Oxide Traps with the Charge Pumping Method

[18p-B301-2] Vacuum Ultraviolet Photoelectron Spectroscopy Study of SiO₂/Si Structure

[18p-B301-3] Evaluation of charge-up on surface of SiO₂ deposited by plasma CVD with XPS to investigate self-compensation mechanism of charge-up on dielectric surfaces

[18p-B301-4] Observation of Si valence electron scattering by inelastic angle-resolved photoelectron spectroscopy

[18p-B301-5] Evaluation of trace metal contamination in SiO₂ by Pulse Photoconductivity Method

[18p-B301-6] Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

[18p-B301-7] Influence of VPT-Induced Trace Particles on Sensitivity in TXRF Measurements (2)

[18p-B301-8] Development of trace metal analysis on a silicon wafer surface

[18p-B301-9] Development of Alkaline Solution generated by Electrolysis of Organic Ammonium Salt for Wet and Cleaning Process in Semiconductor Manufacturing

[18p-B301-10] Electrostatic Discharge Prevention in the Ultra-Pure Water Spray Cleaning of Semiconductor Chips using Induction Charging.
(2^nd Report; Consideration with Position and Shape of an Inductive charge device)

[18p-P12-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-P12-1] Photoluminescence Study of Si/SiO₂ Nano-wall Arrays

[18p-P12-2] Persistent Homology Analysis of Amorphous SiO₂ Thin Film

[18p-P12-3] Correlation between formation condition of AlOx thin film by spin-coating and carrier lifetime

[18p-P12-4] Development of Brush Scrubbing for Ultra-fine particle cleaning

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18a-B301-1] Transport Simulation of 1D Nanostructures considring the Electron-Phonon Interaction

△ [18a-B301-4] Improvements of PERC Solar Cell Performances with TCAD Simulation

△ [18a-B301-8] Molecuar dynamics simulation of solid phase epitaxy of Si

△ [18a-B301-9] Enhanced Etching of Ge Surfaces Assisted by Reduced Graphene Oxide and Its Mechanism

▼ [18a-B301-10] A study on the stability of Pd2Si formed by RF magnetron sputtering

△ [18a-B301-11] Improvement of retention characteristics utilizing Hf-based MONOS nonvolatile memory

[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-P12-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Authentication

▼ [18a-B301-10] A study on the stability of Pd₂Si formed by RF magnetron sputtering