The 65h JSAP Spring Meeting, 2018

Presentation information

Print

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 9:00 AM - 12:00 PM B301 (53-301)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

11:30 AM - 11:45 AM

▼ [18a-B301-10] A study on the stability of Pd2Si formed by RF magnetron sputtering

〇(D)RengieMark Domincel Mailig1, Yuya Tsukamoto1, Sohya Kudoh1, Shun-ichiro Ohmi1 (1.Tokyo Tech)

Keywords:silicide, MOSFET

In this work, the properties of palladium silicide were investigated as a possible candidate to replace the conventional MISFET S/D to realize the low thermal budget gate-first process.