Improvement of retention characteristics utilizing Hf-based MONOS nonvolatile memory

Sohya Kudoh; R.M.D Mailig; Shin Ishimatsu; Yusuke Horiuchi; Shun-ichiro Ohmi

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 9:00 AM - 12:00 PM B301 (53-301)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

11:45 AM - 12:00 PM

△ [18a-B301-11] Improvement of retention characteristics utilizing Hf-based MONOS nonvolatile memory

〇(DC)Sohya Kudoh¹, R.M.D Mailig¹, Shin Ishimatsu¹, Yusuke Horiuchi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:nonvolatile memory, Hf, retention characteristics

The memory characteristics of diodes and MISFETs with Hf-based MONOS gate stack structure were investigated in our previous reports. In this report, the retention characteristics of Hf-based MONOS nonvolatile memory were investigated.