The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 1:00 PM - 3:45 PM B301 (53-301)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

2:45 PM - 3:00 PM

[18p-B301-7] Influence of VPT-Induced Trace Particles on Sensitivity in TXRF Measurements (2)

Rikiichi Ohno1 (1.Sony Semiconductor Solutions)

Keywords:Metal impurity analysis, Total Reflection X-ray Fluorescence

We have reported that metallic contaminant sensitivity by vapor phase treatment (VPT)- TXRF depends on total volume of dry traces produced by VPT.The reason why Cu sensitivity is lower than the other metals is considered that Cu atoms cannot be taken into the dry traces due to the its higher electronegativity than Si.In this study, Cu sensitivity has successfully become higher by the addition of HCl to HF vapor on VPT and the above-mentioned model has been verified.