Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

Takahiro Ono; Tatsuro Kawano; Shotaro Kuzukawa; Hiroki Matsuyama; Yamato Murakami; Takuya Yamamoto; Kaito Kashiwagi; Kazuhiro Kobayashi; Masao Yoshioka; Tsuyoshi Hashishin; Hiroshi Kubota

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 1:00 PM - 3:45 PM B301 (53-301)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

2:30 PM - 2:45 PM

[18p-B301-6] Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Takahiro Ono¹, Tatsuro Kawano¹, Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Yamato Murakami², Takuya Yamamoto², Kaito Kashiwagi², Kazuhiro Kobayashi², Masao Yoshioka², Tsuyoshi Hashishin², Hiroshi Kubota² (1.GSST Kumamoto Univ, 2.Kumamoto Univ)

Keywords:evaluation, surface, silicon

We have devised a method for measuring interface state density of semiconductor devices by applying PPCM (Pulse Photoconductivity Method) which is a nondestructive and noncontact photoconductivity measurement method. In this paper, we report the measurement principle of the interface state density measurement and the measurement result of the interface state density of the N type Si substrate on which the oxide film is formed.