The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 9:00 AM - 12:00 PM B301 (53-301)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

9:45 AM - 10:00 AM

[18a-B301-4] Improvements of PERC Solar Cell Performances with TCAD Simulation

〇(M2)Takaya Sugiura1, Satoru Matsumoto1, Nobuhiko Nakano1 (1.Keio Univ.)

Keywords:device simulation, solar cell

Device simulation is effective for improvements of solar cell performances in terms of costs and time and visualization of physics of the device, but it needs proper physical models and parameters.
In this study, we compared Sentaurus TCAD and PC1D, used widely in PV market, and established high-precision solar cell modeling. Using this modeling we evaluated and improved PERC solar cell, which is one of next generation solar cells.