[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-B301-3] Evaluation of charge-up on surface of SiO₂ deposited by plasma CVD with XPS to investigate self-compensation mechanism of charge-up on dielectric surfaces

〇(B)Kota Ushimaru^1,2, Takahiro Harie^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda univ., 2.ISAS/JAXA)

Keywords:insulator, charge-up, XPS