Study on Physical Mechanisms of Resistance Switching of Sputter-Deposited Silicon Oxide Films on Si Substrate

Yasuhisa Omura; Rintaro Yamaguchi; Shingo Sato

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18p-C102-1~16] 6.3 Oxide electronics

Sun. Mar 18, 2018 1:45 PM - 6:00 PM C102 (52-102)

Yasuhisa Naitoh(AIST), Shoso Shingubara(Kansai Univ.)

1:45 PM - 2:00 PM

[18p-C102-1] Study on Physical Mechanisms of Resistance Switching of Sputter-Deposited Silicon Oxide Films on Si Substrate

〇Yasuhisa Omura¹, Rintaro Yamaguchi¹, Shingo Sato¹ (1.Kansai Univ.)

Keywords:silicon oxide film, sputter depsition, Si precipitates

A new mechanism for resistance switching of sputter-deposited silicon oxide film on Si substrate is proposed. Not the suboxide, but Si precipitates play an important role of resistance switching.