The 65h JSAP Spring Meeting, 2018

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[18p-C102-1~16] 6.3 Oxide electronics

Sun. Mar 18, 2018 1:45 PM - 6:00 PM C102 (52-102)

Yasuhisa Naitoh(AIST), Shoso Shingubara(Kansai Univ.)

2:00 PM - 2:15 PM

[18p-C102-2] Direct Observation of Transient Switching Phenomenon of Sputter-Deposited Silicon Oxide Films on Si Substrate

〇Yasuhisa Omura1, Shingo Sato1 (1.Kansai Univ.)

Keywords:Transient analysis of resistance switching, silicon oxide films, switching energy

Transient switching phenomenon of sputter-deposited silicon oxide film was directly observed using a specific circuit. It was shown that micro-seconds are neccesary to take resistance transition.