[18p-C102-1~16] 6.3 Oxide electronics

[18p-C102-3] Estimation of Resistance Switching Energy in Sputter-Deposited Silicon Oxide Films

〇Yasuhisa Omura¹, Takuya Akano^1,2, Shingo Sato¹ (1.Kansai Univ., 2.NIST)

Keywords:Switching energy, silicon oxide films, low-energy switching

Resistance switching energy was investigated using an Au/Silicon oxide/b-FeSi₂/n-Si stack structure. According to the experimental result of switching time of silicon oxide film, it is demonstrated that the device shows a very low energy resistance switching in comparison to past data.