Precise control of resistive switching characteristics by modulating oxygen vacancy distribution in four-terminal memristive devices

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Sun. Mar 18, 2018 1:45 PM - 6:00 PM C102 (52-102)

4:15 PM - 4:30 PM

〇Takuma Shimizu¹, Zenya Nagata¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Sakai Akira¹ (1.Osaka University)

Keywords:Memristor, Resistive RAM, TiO2