Finite Element Analysis of Resistive Switching Characteristics in four-terminal memristive devices

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Sun. Mar 18, 2018 1:45 PM - 6:00 PM C102 (52-102)

4:30 PM - 4:45 PM

〇Zenya Nagata¹, Takuma Shimizu¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka University)

Keywords:Memristor, Resistive RAM, TiO2