[18p-C102-1~16] 6.3 Oxide electronics

[18p-C102-5] Crossover from Deterministic to Stochastic Nature of Resistive Switching in a Tantalum Oxide Thin Film

〇Yoshifumi Nishi^1,2, Stephan Menzel^2,3 (1.Toshiba R&D Center, 2.RWTH Aachen Univ., 3.Forschungszentrum Juelich)

Keywords:resistive memory, Weibull distribution

We study the voltage dependece of the statistical distrubition of the SET time of bipolar resistive switching in a tantalum oxide thin film measured in a single cell. It was found that the distributions are described by Weibull distributions and that the Weibull beta sharply decreases from over 2 toward 1 when the amplitude of the SET voltage is lowered. This indicates that while the SET mechanism can be described deterministically at large SET voltages, stochastic nature becomes dominant when the SET voltage is lowered.