[18p-C102-1~16] 6.3 Oxide electronics

[18p-C102-7] c-AFM and PEEM of the resistance-changed-spot on TaO_x

〇Guento Misawa¹, Junpei Kawakita^2,3, Toshiyuki Taniuchi^2,3, Shik Shin^2,3, Yasuhisa Naitoh^1,2, Hisashi Shima^1,2, Hiroyuki Akinaga^1,2 (1.NeRI-AIST, 2.OPERANDO-OIL, 3.ISSP Univ. of Tokyo)

Keywords:photoemission electron microscope, TaOx, conductive atomic force microscope

High spatial resolution of a photoemission electron microscope with a CW laser (Laser-PEEM) is expected to enable us to elucidate the reaction in the nanoscopic area of the resistance change of the transition-metal-oxide-based resistive random access memory. The TaO_x film on Pt was prepared as the resistance change material. Low resistance spots were formed and investigated by a tip of the conductive atomic force microscope (c-AFM). The photo electron images of Laser-PEEM show spots of contrast at the almost same positions as the low resistance spots in the current images of c-AFM. On the other hand, the different internal nanostructure was observed in the spot of the Laser-PEEM image.