Oral presentation

[18a-C102-1~11] 6.3 Oxide electronics

Sun. Mar 18, 2018 9:00 AM - 12:00 PM C102 (52-102)

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9:00 AM - 9:15 AM

[18a-C102-1] Estimation of band-edge fluctuation from temperature dependence on photo-current decay in polycrystalline ZnO thin films

〇(M1)Katsuyoshi Tasaki^1,2, Worasawat Suchada^1,2, Yoichiro Neo², Yoshinori Hatanaka¹, Hidenori Mimura² (1.Shizuoka Univ., 2.RIE)

9:15 AM - 9:30 AM

▲ [18a-C102-2] Study of Photocatalytic Reaction with Oxygen Molecules in the Nano-rods ZnO Film Prepared by Hydrothermal Growth

〇(D)Suchada Worasawat^1,3, Katsuyoshi Tasaki^2,3, Yoichiro Neo³, Yoshinori Hatanaka³, Hidenori Mimura³ (1.GSST, Shizuoka Univ., 2.GSIST, Shizuoka Univ., 3.RIE, Shizuoka Univ.)

9:30 AM - 9:45 AM

▲ [18a-C102-3] Nanostructured ZnO Photoelectrode grown on Seedless Flexible Substrate

〇(PC)MD Faruk Hossain¹, Shigeki Naka¹, Hiroyuki Okada¹ (1.University of Toyama)

9:45 AM - 10:00 AM

[18a-C102-4] Development of Novel Electron-Catalyst Devices:Investigation on the Onset and control of Avalanche Electron Multiplication Effect

〇Yuuki Yamazaki¹, Tomomasa Sato¹, Nobuyuki Matsuki¹ (1.Kanagawa Univ.)

10:00 AM - 10:15 AM

△ [18a-C102-5] Analysis of photocarrier mobility in BaSnO₃ thin films

〇Katsuya Kihara¹, Ryota Takahashi^1,2, Mikk Lippmaa¹ (1.ISSP, Univ. Tokyo, 2.JST PRESTO)

10:15 AM - 10:30 AM

[18a-C102-6] Preparation of Ta-doped SnO₂ thin films by DC Sputtering

〇Michio Mikawa¹, Kunihiko Nakata² (1.National Inst. of Tech. Kagawa College ,, 2.Sumitomo Chemical Co., Ltd.)

10:45 AM - 11:00 AM

△ [18a-C102-7] Fabrication and structural characterization of mist CVD-grown SnO₂thin films on YSZ(100) substrates

〇Yasuyuki Niwa¹, Daisuke Kan¹, Tomoyuki Koganezawa², Yuichi Shimakawa¹ (1.ICR, Kyoto Univ., 2.JASRI)

11:00 AM - 11:15 AM

[18a-C102-8] Epitaxial fluorine doped SnO2 thin films grown by mist CVD

〇Taichi Okumura¹, Hiroyuki Nishinaka¹, Yoshimoto Masahiro¹ (1.Kyoto Inst. of Tech)

11:15 AM - 11:30 AM

▼ [18a-C102-9] Control of TiO₂ thin film density and mechanical properties by laser radiation.

〇(DC)Dauksta Edvins^1,2, Arturs Medvids², Vygantas Mizeikis¹, Kenji Murakami¹ (1.Shizuoka University, 2.Riga Technical Univ.)

11:30 AM - 11:45 AM

▲ [18a-C102-10] Formation and Characterization of Ga Doped ZnO 1-D Nanostructures by Using Advanced Spray Pyrolysis Deposition Technique

Sameera Attanayake¹, Masayuki Okuya², 〇Kenji Murakami² (1.GSST Shizuokka Univ., 2.GSIST Shizuoka Univ.)

11:45 AM - 12:00 PM

△ [18a-C102-11] High efficient transducer using polarity inverted ZnO thin film

〇(B)Tsuyoshi Majima¹, Takahiro Shimidzu^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST-PRESTO)

Oral presentation

[18p-C102-1~16] 6.3 Oxide electronics

Sun. Mar 18, 2018 1:45 PM - 6:00 PM C102 (52-102)

Yasuhisa Naitoh(AIST), Shoso Shingubara(Kansai Univ.)

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1:45 PM - 2:00 PM

[18p-C102-1] Study on Physical Mechanisms of Resistance Switching of Sputter-Deposited Silicon Oxide Films on Si Substrate

〇Yasuhisa Omura¹, Rintaro Yamaguchi¹, Shingo Sato¹ (1.Kansai Univ.)

2:00 PM - 2:15 PM

[18p-C102-2] Direct Observation of Transient Switching Phenomenon of Sputter-Deposited Silicon Oxide Films on Si Substrate

〇Yasuhisa Omura¹, Shingo Sato¹ (1.Kansai Univ.)

2:15 PM - 2:30 PM

[18p-C102-3] Estimation of Resistance Switching Energy in Sputter-Deposited Silicon Oxide Films

〇Yasuhisa Omura¹, Takuya Akano^1,2, Shingo Sato¹ (1.Kansai Univ., 2.NIST)

2:30 PM - 2:45 PM

▲ [18p-C102-4] Neutral Oxygen Beam Surface Treatment Enabled Resistive Switching Characteristics in ZnO-based Conducting Bridge Random Access Memory

〇(PC)FIRMAN MANGASA SIMANJUNTAK¹, Takeo Ohno¹, Seiji Samukawa¹ (1.Tohoku Univ.)

2:45 PM - 3:00 PM

[18p-C102-5] Crossover from Deterministic to Stochastic Nature of Resistive Switching in a Tantalum Oxide Thin Film

〇Yoshifumi Nishi^1,2, Stephan Menzel^2,3 (1.Toshiba R&D Center, 2.RWTH Aachen Univ., 3.Forschungszentrum Juelich)

3:00 PM - 3:15 PM

[18p-C102-6] Analog resistive change behavior in Ta₂O₅ resistive change device

〇Hisashi SHIMA¹, Makoto TAKAHASHI¹, Yasuhisa NAITOH¹, Hiroyuki AKINAGA¹ (1.AIST)

3:15 PM - 3:30 PM

[18p-C102-7] c-AFM and PEEM of the resistance-changed-spot on TaO_x

〇Guento Misawa¹, Junpei Kawakita^2,3, Toshiyuki Taniuchi^2,3, Shik Shin^2,3, Yasuhisa Naitoh^1,2, Hisashi Shima^1,2, Hiroyuki Akinaga^1,2 (1.NeRI-AIST, 2.OPERANDO-OIL, 3.ISSP Univ. of Tokyo)

3:30 PM - 3:45 PM

[18p-C102-8] Investigation of the operation voltage for the gradual-reset behavior of metal-oxide memristors for sensing application

〇Tatsuya Iwata^1,2, Kazuaki Sawada^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

4:00 PM - 4:15 PM

△ [18p-C102-9] Non-Destructive Operando Observations of Chemical States in ReRAM by Laser-excited Photoemission Electron Microscopy

〇(M2)Junpei Kawakita^1,2, Hisashi Shima^2,3, Yasuhisa Naito^2,3, Hiro Akinaga^2,3, Toshiyuki Taniuchi^1,2, Shik Shin^1,2 (1.ISSP, Univ. of Tokyo, 2.OIL AIST-UTokyo OPERANDO-OIL, 3.NeRI-AIST)

4:15 PM - 4:30 PM

△ [18p-C102-10] Precise control of resistive switching characteristics by modulating oxygen vacancy distribution in four-terminal memristive devices

〇Takuma Shimizu¹, Zenya Nagata¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Sakai Akira¹ (1.Osaka University)

4:30 PM - 4:45 PM

△ [18p-C102-11] Finite Element Analysis of Resistive Switching Characteristics in four-terminal memristive devices

〇Zenya Nagata¹, Takuma Shimizu¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka University)

4:45 PM - 5:00 PM

△ [18p-C102-12] Fabrication of a three-valued memory device based on the switching of a standard electrode potential

〇(B)Yuki Watanabe¹, Ryota Shimizu^1,2, Kazunori Nishio¹, Issei Sugiyama¹, Wei Liu³, Satoshi Watanabe³, Taro Hitosugi¹ (1.Tokyo Tech., 2.JST-PRESTO, 3.Univ. Tokyo)

5:00 PM - 5:15 PM

△ [18p-C102-13] Conductivity Modulation in SrVO₃ Thin Films Achieved by All-Solid-State Redox Transistors

〇Makoto Takayanagi^1,2, Takashi Tsuchiya², Wataru Namiki^1,2, Tohru Higuchi¹, Kazuya Terabe² (1.Tokyo Univ. Sci., 2.NIMS)

5:15 PM - 5:30 PM

△ [18p-C102-14] Resistance and Current Control over Very Wide Range in Conducting Bridge Random Access Memory

〇(B)Atsushi Shimizu¹, Sohta Hida², Satoru Kishida², Kentaro Kinoshita¹ (1.Tokyo Univ. of Science, 2.Tottori Univ.)

5:30 PM - 5:45 PM

△ [18p-C102-15] Electrical characteristics of Pt/TiO₂/Pt using TiO₂ with various crystallinities

〇(B)Masaya Arahata¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:45 PM - 6:00 PM

△ [18p-C102-16] Oxygen composition and thickness dependences of electrical characteristics in Ta₂O₅-based ReRAM

〇Toshiki Miyatani¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Oral presentation

[19a-C102-1~11] 6.3 Oxide electronics

Mon. Mar 19, 2018 9:00 AM - 12:00 PM C102 (52-102)

Keisuke Shibuya(AIST)

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9:00 AM - 9:15 AM

[19a-C102-1] Preparation and Characterization of Magnesium Solid Electrolyte Thin Films by Sputtering Method

〇Norihito Fujinoki¹, Takuji Tsujita¹, Morio Tomiyama¹ (1.Panasonic Corp.)

9:15 AM - 9:30 AM

[19a-C102-2] Theoretical study on the (104) LiCoO₂/amorphous Li₃BO₃ electrode/electrolyte interface structures using the first-principles molecular dynamics simulations

〇Minoru Ikeda¹, Yoshinori Tanaka², Takahisa Ohno^1,2 (1.NIMS MANA, 2.NIMS GREEN)

9:30 AM - 9:45 AM

△ [19a-C102-3] Fabrication of oxide dots supported LiCoO₂ epitaxial thin film and their high-rate performance as a function of dot-type

〇Sou Yasuhara¹, Yumi Yoshikawa², Takashi Teranishi², Shintaro Yasui¹, Tomoyasu Taniyama¹, Mitsuru Itoh¹ (1.Tokyo Institute of Technology, 2.Okayama University)

9:45 AM - 10:00 AM

△ [19a-C102-4] Fabrication of all-solid-state Li batteries with LiTi₂O₄ epitaxial thin films

〇(B)Yasutaka Kobayashi¹, Kazunori Nishio¹, Ryota Shimizu^1,2, Taro Hitosugi¹ (1.Tokyo Tech., 2.JST-PRESTO)

10:00 AM - 10:15 AM

[19a-C102-5] Fabrication and magnetic property of LaCu₃Mn_4-xFe_xO₁₂ thin film

〇Kazumasa Yamamoto¹, Keisuke Shimizu¹, Kei Shigematsu¹, Masaki Azuma¹ (1.Tokyo Tech MSL)

10:15 AM - 10:30 AM

[19a-C102-6] Weak anti-localization in perovskite BaSn_1-xPb_xO₃ thin firms

〇(M1)Takumaru Chida¹, Junichi Shiogai¹, Kohei Fujiwara¹, Atsushi Tsukazaki¹ (1.IMR, Tohoku Univ.)

10:45 AM - 11:00 AM

[19a-C102-7] [Young Scientist Presentation Award Speech] Effects of lattice strain on superconductivity in LaO epitaxial thin films

〇Kenichi Kaminaga^1,2, Daichi Oka², Tomoteru Fukumura^2,3,4, Tetsuya Hasegawa¹ (1.Univ. Tokyo, 2.Tohoku Univ., 3.WPI-AIMR, 4.CSRN)

11:00 AM - 11:15 AM

△ [19a-C102-8] Epitaxial growth and dimensionality-controlled MIT of Ruddlesden-Popper type Sr_n₊₁V_nO_3n+1 (001) thin films (n = 1, 2)

〇Shintaro Fukuda¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR, 3.CSRN)

11:15 AM - 11:30 AM

△ [19a-C102-9] High electrical conductivity in YbO epitaxial thin film with strong spin-orbit interaction

〇Taku Yamamoto¹, Daichi Saito¹, Kenichi Kaminaga^1,2, Daichi Oka¹, Tetsuya Hasegawa², Tomoteru Fukumura^1,3,4 (1.Tohoku Univ., 2.Univ. of Tokyo, 3.WPI-AIMR, Tohoku Univ., 4.CSRN, Tohoku Univ.)

11:30 AM - 11:45 AM

△ [19a-C102-10] Molecular beam epitaxy of superconducting Sr₂RuO₄ thin films

〇masaki uchida¹, Motoharu Ide¹, Hirosuke Watanabe¹, Kei Takahashi^2,3, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS, 3.JST PRESTO)

11:45 AM - 12:00 PM

[19a-C102-11] Evaluation of superconducting properties of a Sr₂RuO₄ thin film

〇Motoharu Ide¹, Masaki Uchida¹, Minoru Kawamura², Kei Takahashi^2,3, Yusuke Kozuka¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS, 3.JST PRESTO)

Oral presentation

[20a-C102-1~12] 6.3 Oxide electronics

Tue. Mar 20, 2018 9:00 AM - 12:15 PM C102 (52-102)

Akira Chikamatsu(Univ. of Tokyo)

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9:00 AM - 9:15 AM

[20a-C102-1] Growth and characterization of VO₂ thin films on hexagonal boron nitride

〇Shingo Genchi¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)

9:15 AM - 9:30 AM

[20a-C102-2] Effective resistance modulation in a VO₂ FET with hBN as a gate insulator

〇(M1)Yuto Anzai¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Kazuhiko Matsumoto¹, Hidekazu Tanaka¹ (1.ISIR Osaka Univ., 2.NIMS)

9:30 AM - 9:45 AM

[20a-C102-3] Silicon waveguide optical switch with metal–insulator transition of VO₂

〇Keisuke Shibuya¹, Yuki Atsumi¹, Tomoya Yoshida¹, Yoichi Sakakibara¹, Masahiko Mori¹, Akihito Sawa¹ (1.AIST)

9:45 AM - 10:00 AM

△ [20a-C102-4] Time response to the Pulse Gate Voltage in VO₂–Channel Metal-Insulator Transition FET

〇Yusai Wakafuji¹, Takeaki Yajima¹, Tomoki Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

10:00 AM - 10:15 AM

△ [20a-C102-5] Control of the Metal–Insulator Transition in VO₂ Thin Films by K Deposition

〇Daisuke Shiga^1,2, Makoto Minohara², Miho Kitamura², Ryu Yukawa², Taichi Mitsuhashi^1,2, Koji Horiba², Hiroshi Kumigashira^1,2 (1.Tohoku Univ., 2.KEK-PF)

10:15 AM - 10:30 AM

[20a-C102-6] Autonomous Operation of Neuron Circuits Using Thermal Degree of Freedom in Phase Transition Materials

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

10:45 AM - 11:00 AM

[20a-C102-7] Colossal resistive jump due to metal-insulator transition in single crystal VO₂ nanowires on TiO₂(001) substrates with nano-electrode gap

〇Yoshihide Tsuji¹, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ.)

11:00 AM - 11:15 AM

[20a-C102-8] Huge resistance modulation in epitaxial VO₂ thin films by Pt catalytic proton doping

〇Keita Muraoka¹ (1.ISIR, Osaka Univ.)

11:15 AM - 11:30 AM

△ [20a-C102-9] Origins of spin depolarization in half-metal CrO₂: High-resolution spin-resolved photoemission spectroscopy study

〇Hirokazu Fujiwara¹, Kensei Terashima², Masanori Sunagawa¹, Yuko Yano¹, Fumiya Yoshii¹, Yuka Matsuura¹, Koichiro Yaji³, Ayumi Harasawa³, Kenta Kuroda³, Shik Shin³, Takanori Wakita², Yuji Muraoka^1,2, Takayoshi Yokoya^1,2 (1.Okayama Univ., 2.RIIS Okayama Univ., 3.ISSP)

11:30 AM - 11:45 AM

△ [20a-C102-10] Ferroelectric gate transistor operated by electric double layer

〇Ryutaro Nishino¹, Yusuke Kozuka¹, Fumitaka Kagawa^1,2, Masaki Uchida¹, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS)

11:45 AM - 12:00 PM

△ [20a-C102-11] Thin-film stabilization of ZnSnO₃ and MgSnO₃by molecular-beam epitaxy

〇(M2)Hiroya Minato¹, Kohei Fujiwara¹, Junichi Shiogai¹, Akihito Kumamoto², Naoya Shibata², Atsushi Tsukazaki¹ (1.IMR, Tohoku Univ., 2.Institute of Enginneering Innovation, Univ. of Tokyo)

12:00 PM - 12:15 PM

△ [20a-C102-12] Mechanism of charge transfer at heterointerfaces between perovsktite transition-metal oxides

〇(P)MIHO KITAMURA¹, MASAKI KOBAYASHI¹, MAKOTO MINOHARA¹, ENJU SAKAI¹, HIROSHI FUJIOKA², KOJI HORIBA¹, HIROSHI KUMIGASHIRA¹ (1.KEK-PF, 2.Univ. of Tokyo)

Oral presentation

[20p-C102-1~10] 6.3 Oxide electronics

Tue. Mar 20, 2018 1:45 PM - 4:30 PM C102 (52-102)

Miho Kitamura(KEK)

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1:45 PM - 2:00 PM

[20p-C102-1] First-principles study of nickel oxyfluoride NdNiO_3−xF_x

〇Yuji Kurauchi¹, Akira Chikamatsu¹, Hasegawa Tetsuya¹ (1.Univ. of Tokyo)

2:00 PM - 2:15 PM

[20p-C102-2] Magnetic properties in multi-layered rare-earth iron garnet

〇Ryota Kikuchi¹, Akihiro Katougi¹, Eito Sato¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

2:15 PM - 2:30 PM

[20p-C102-3] Strain structures and magnetic/spectroscopic properties of garnet ferrite thin films

〇Akihiro Katougi¹, Ryota Kikuchi¹, Eito Sato¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

2:30 PM - 2:45 PM

[20p-C102-4] Magnetization reversal by electric field in Co-substituted BiFeO₃ thin films

〇Keisuke Shimizu¹, Ryo Kawabe¹, Hajime Hojo², Hajime Yamamoto¹, Ko Mibu³, Masaki Azuma¹ (1.MSL, Tokyo Tech., 2.Kyushu Univ., 3.Nagoya Inst. Tech.)

2:45 PM - 3:00 PM

[20p-C102-5] Modulating the Flatband Potential at Oxide Photoanodes using Atomic-scale Dipoles

〇YASUYUKI HIKITA¹, Takashi Tachikawa¹, Motoki Osada², Kyuho Lee², Kazunori Nishio^2,3, Hirohito Ogasawara¹, Harold Hwang^1,2 (1.SLAC, 2.Stanford Univ., 3.Tokyo Tech.)

3:15 PM - 3:30 PM

[20p-C102-6] Modulation of superconducing transition temperature of La_1.85Sr_0.15CuO_4-δ thin films
induced by F^- ion insertion

〇(M1)Kuni Yamada¹, Akira Chikamatsu¹, Tomoya Onozuka¹, Takahiro Maruyama¹, Ryousuke Ishigami¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

3:30 PM - 3:45 PM

[20p-C102-7] Field-effect carrier doping to pseudo-two-dimensional SrTiO₃ ultrathin films

〇Takashi Tojo¹, Kohei Yshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech. Dept. Chem. Sci. Eng., 2.MCES)

3:45 PM - 4:00 PM

[20p-C102-8] Electrostatic carrier doping on an infinite layer (Sr,La)CuO₂ thin film

Yukimasa Naganuma¹, Yumiko Katayama¹, 〇Kazunori Ueno¹ (1.Dept.Basic Sci., Univ. Tokyo)

4:00 PM - 4:15 PM

[20p-C102-9] Magnetic Control of Electric Double Layer Transistor

〇Takashi Tsuchiya¹, Masataka Imura¹, Yasuo Koide¹, Kazuya Terabe¹ (1.NIMS)

4:15 PM - 4:30 PM

[20p-C102-10] Wide-range accurate resistance modulation in SmNiO₃ EDLT

〇(M1)Daiki Kawamoto¹, Azusa Hattori^1,2, Mahito Yamamoto¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.JST-PRESTO)

Poster presentation

[19p-P5-1~39] 6.3 Oxide electronics

Mon. Mar 19, 2018 1:30 PM - 3:30 PM P5 (P)

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1:30 PM - 3:30 PM

[19p-P5-1] High-rate sputter deposition of WO₃ films by using a Facing Target type sputtering system

〇Yoji Yasuda¹, Yoichi Hoshi¹ (1.Tokyo Polytechnic Univ.)

1:30 PM - 3:30 PM

▲ [19p-P5-2] Epitaxial growth of highly strained RuO₂ thin film by self-buffering method

〇(M2)Zainab Fatima¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR, 3.CSRN)

1:30 PM - 3:30 PM

[19p-P5-3] Metal-insulator transition in layered oxide La₂O₂Bi with Bi square net

〇Kota Matsumoto¹, Hideyuki Kawasoko¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR,Tohoku Univ., 3.CSRN,Tohoku Univ.)

1:30 PM - 3:30 PM

[19p-P5-4] Probe load dependence of sefl-oscillation properties of VO₂ films on conductive TiN layers

〇Ryuta Tobe¹, Tomohiro Aoto¹, Yosuke Kitagawa¹, Keisuke Mamiya¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[19p-P5-5] Oriented-growth of phase transitionVO₂films and the effect of grain boundary diffusions by introduction of (111)-oriented TiN substrates

〇Tomohiro Aoto¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[19p-P5-6] Observation of Metal-insulator Transition of VO₂ Thin Film Deposited on YSZ Substrate

Takumi Minohara¹, Tomohiro Tannno¹, Makoto Minohara², Koji Horiba², Hioshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

[19p-P5-7] Optical properties of VO₂ films on ZnO/glass with reduced transition temperature by rf substrate bias sputtering

〇Hiroaki Hoshino¹, Tatsuro Fukuzumi¹, Kenta Sato¹, Kunio Okimura¹, Iwao Yamaguchi², Tetsuo Tsuchiya² (1.Tokai Univ., 2.AIST)

1:30 PM - 3:30 PM

[19p-P5-8] Strain Effect and Electrical Property of Nd_0.6Sr_0.4FeO_3-_δ Thin Film

〇(M2)Wataru Namiki¹, Makoto Takayanagi^1,2, Takashi Tsuchiya², Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.NIMS, 3.KEK)

1:30 PM - 3:30 PM

[19p-P5-9] Impact of hole-doping on metal-insulator transition in β-pyrochlore-type CsW₂O₆

〇Takuto Soma¹, Kohei Yoshimatsu¹, Koji Horiba^2,3, Hiroshi Kumigashira^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.KEK-PF, 3.MCES)

1:30 PM - 3:30 PM

△ [19p-P5-10] Transport Properties of Ca₂RuO₄ Thin Films Grown by Solid-Phase Epitaxy in Atmospheric Pressure

〇(M1)Shota Yasuta¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

1:30 PM - 3:30 PM

[19p-P5-11] Magnetic Anisotropy of La_0.67Sr_0.33MnO₃(100) Thin Film by Planar-Hall-Effect

〇(D)Kinya Kawamura^1,2, Takashi Tsuchiya², Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Kazuya Terabe², Tohru Higuchi¹ (1.Tokyo Univ. of Sci, 2.NIMS, 3.KEK)

1:30 PM - 3:30 PM

[19p-P5-12] Evaluation of Resistive Switching Memory Device using Wet Process

〇(B)Taisuke Saigo¹, Masataka Higashi¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[19p-P5-13] Application to Resistive Memory and Fabrication of Ta2O5 Thin Film by Wet Process

〇Masataka Higashi¹, Taisuke Saigo¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[19p-P5-14] Observation of Transmission Route of a Molecular-Gap Atomic Switch

〇(B)Nozomi Mishima¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[19p-P5-15] Analysis of resistive switching mechanism in polycrystalline HfO₂by using first-prinsiples calculation

〇(M1C)Sohta Hida¹, Takahiro Yamasaki², Jun Nara², Takahisa Ohno², Satoru Kishida^1,3, Kentaro Kinoshita⁴ (1.Tottori Univ., 2.NIMS, 3.TiFREC, 4.Tokyo Univ. of Science)

1:30 PM - 3:30 PM

[19p-P5-16] Development of a Three-Terminal Atomic Switch in a Vertical Structure

〇Masato Araki¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[19p-P5-17] Research on Reservoir Computing Using Ag₂S Islands Network

〇Keita Ojima¹, Yasuhisa Naitoh², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.Sansou Inst.)

1:30 PM - 3:30 PM

[19p-P5-18] Distribution of Switching-on Time of a Molecular-gap Atomic Switch

〇Chisato Arima¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[19p-P5-19] Fabrication of Pt-Pd/(Y₂O₃-doped ZrO₂ single crystal thin film)/Pt-Pd structure with MEMS technology and its resistive switching properties

〇Koshi Futatsumori¹, Tadashi Shiota¹, Kunio Nishioka², Akihiro Matsutani², Masaru Tada³, Akio Nishiyama¹, Kazuo Shinozaki¹ (1.Tokyo tech, 2.micro,Tokyo tech, 3.Analysis,Tokyo tech)

1:30 PM - 3:30 PM

[19p-P5-20] Fabrication of near-infrared transparent conductive IWO thin film using pressure gradient type plasma gun

〇Yusuke Kondo¹, Noriaki Hashimoto², Eiji Furuya², Yoshiharu Kakehi¹, Takashi Mori¹, Yoshiharu Yamada¹, Takeshi Tanaka¹ (1.ORIST, 2.Chugairo Co., Ltd.)

1:30 PM - 3:30 PM

[19p-P5-21] Resistance reduction of self-standing FTO nanofiber membrane

〇Akimasa Ichigi¹, Muhammad Zobayer BinMukhlish¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[19p-P5-22] Epitaxial synthesis and dielectric property measurement on ε-Ga₂O₃

〇Subaru Yusa¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSRN, Tohoku Univ.)

1:30 PM - 3:30 PM

▲ [19p-P5-23] Ionization potentials and electron affinities of amorphous Cd-In-Ga-O

〇(D)Minseok Kim¹, Hiroshi Yanagi¹ (1.University of Yamanashi)

1:30 PM - 3:30 PM

[19p-P5-24] Improvement of crystallinity of FTO / ZnO using multi buffer layers

〇(M1)Akihiro Mori¹, Zinwei Zhao¹, Guan Sujun¹ (1.Tokyo Univ. of Sci)

1:30 PM - 3:30 PM

[19p-P5-25] The growth of ASnO₃(A=Sr,Ba) films by sputtering and the electrical properties

〇Iduru Kanagawa¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[19p-P5-26] Properties of impurity-doped AlO_x thin films prepared by sol-gel method

〇Yuuki Nanya¹, Koji Abe¹ (1.Nitech)

1:30 PM - 3:30 PM

[19p-P5-27] Characterization of BiVO₄ powders by precipition method

〇(B)Yusuke Ohata¹, Toshiya Banba¹, Mikihiko Nishitani², Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ., 2.Osaka Univ.)

1:30 PM - 3:30 PM

[19p-P5-28] Photorechargeable properties of TiO₂/WO₃/ITO triple-layer coaxial nanofibers

〇Takuya Matsuda¹, Iesuke Yorita¹, Taito Kumamoto¹, Taichi Komaki¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[19p-P5-29] Resistivity of Cu₂O thin films prepared by electrochemical deposition \\in various pH solution

〇Tetsuya Ageno¹, Takeru Saisho¹, Daiki Maeda¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima univ., 2.Takata Corp.)

1:30 PM - 3:30 PM

△ [19p-P5-30] Enhanced photoelectrochemical activity of a La,Rh co-doped SrTiO3 photocathode

〇Yoshihisa Hosokawa¹, Ryota Takahashi^1,2, Hiroshi Kumigashira³, Mikk Lippmaa¹ (1.Univ. of Tokyo, ISSP, 2.JST PRESTO, 3.PF,KEK)

1:30 PM - 3:30 PM

[19p-P5-31] Electrochemical growth of Cu₂O films under Cu supply-limiting conditions

〇Shuhei Shiomoto¹, Atsushi Ashida¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

▲ [19p-P5-32] Fabrication of Perovskite Solar Cell with Thickness-defendant TiO₂ Photoelectrode

〇(PC)MD Faruk Hossain¹, Shigeki Naka¹, Hiroyuki Okada¹ (1.University of Toyama)

1:30 PM - 3:30 PM

[19p-P5-33] Capacitance Device of Amorphous WO_3-x by Redox Reaction

Takahiro Sakai¹, Ten Sugimoto¹, Hiroshi Hayashi¹, Makoto Minohara², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

[19p-P5-34] Surface Ionic Conduction of Sm-doped CeO_2-_d Thin Film at intermediate temperature region

Daiki Nishioka¹, Wataru Namiki¹, Makoto Minohara², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

[19p-P5-35] Monolithic three-dimensional battery fabricated by electrochemical deposition of conducting polymer polyaniline onto inner surfaces of a mesoporous TiO₂

〇Kyohei Akiyoshi¹, Ryoichi Arima¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima Univ, 2.Takata Corporation)

1:30 PM - 3:30 PM

[19p-P5-36] Demonstration of operation of IGZO transistor with solid-state-electric double layer as a gate

〇(M1)Yoshitaka Watanabe¹, Asano Tetsuya¹, Fujii Mami¹, Juan Paolo Bermundo¹, Ishikawa Yasuaki¹, Uraoka Yukiharu¹, Adachi Hedeaki¹ (1.NAIST)

1:30 PM - 3:30 PM

△ [19p-P5-37] Development of a thin-film deposition system utilizing Bayesian optimization

〇(M1)Shigeru Kobayashi¹, Ryota Shimizu^1,2, Yasunobu Ando³, Kazunori Nishio¹, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.AIST)

1:30 PM - 3:30 PM

△ [19p-P5-38] Fabrication of NaCrO₂ epitaxial thin films using pulsed laser deposition

〇(M1)Hiroaki Asoma¹, Ryota Shimizu^1,2, Kazunori Nishio¹, Taro Hitosugi¹ (1.Tokyo Tech., 2.JST-PRESTO)

1:30 PM - 3:30 PM

[19p-P5-39] Mechanism of Dipole Layer Formation at high-k/high-k interface by Molecular Dynamics Simulation

〇Shota Kanemaru¹, Nobuhiro Nakagawa¹, Okuto Takahashi¹, Takanobu Watanabe¹ (1.Waseda Univ.)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18a-C102-1~11] 6.3 Oxide electronics

▲ [18a-C102-2] Study of Photocatalytic Reaction with Oxygen Molecules in the Nano-rods ZnO Film Prepared by Hydrothermal Growth

▲ [18a-C102-3] Nanostructured ZnO Photoelectrode grown on Seedless Flexible Substrate

△ [18a-C102-5] Analysis of photocarrier mobility in BaSnO3 thin films

△ [18a-C102-7] Fabrication and structural characterization of mist CVD-grown SnO2 thin films on YSZ(100) substrates

▼ [18a-C102-9] Control of TiO2 thin film density and mechanical properties by laser radiation.

▲ [18a-C102-10] Formation and Characterization of Ga Doped ZnO 1-D Nanostructures by Using Advanced Spray Pyrolysis Deposition Technique

△ [18a-C102-11] High efficient transducer using polarity inverted ZnO thin film

[18p-C102-1~16] 6.3 Oxide electronics

▲ [18p-C102-4] Neutral Oxygen Beam Surface Treatment Enabled Resistive Switching Characteristics in ZnO-based Conducting Bridge Random Access Memory

△ [18p-C102-9] Non-Destructive Operando Observations of Chemical States in ReRAM by Laser-excited Photoemission Electron Microscopy

△ [18p-C102-10] Precise control of resistive switching characteristics by modulating oxygen vacancy distribution in four-terminal memristive devices

△ [18p-C102-11] Finite Element Analysis of Resistive Switching Characteristics in four-terminal memristive devices

△ [18p-C102-12] Fabrication of a three-valued memory device based on the switching of a standard electrode potential

△ [18p-C102-13] Conductivity Modulation in SrVO3 Thin Films Achieved by All-Solid-State Redox Transistors

△ [18p-C102-14] Resistance and Current Control over Very Wide Range in Conducting Bridge Random Access Memory

△ [18p-C102-15] Electrical characteristics of Pt/TiO2/Pt using TiO2 with various crystallinities

△ [18p-C102-16] Oxygen composition and thickness dependences of electrical characteristics in Ta2O5-based ReRAM

[19a-C102-1~11] 6.3 Oxide electronics

△ [19a-C102-3] Fabrication of oxide dots supported LiCoO2 epitaxial thin film and their high-rate performance as a function of dot-type

△ [19a-C102-4] Fabrication of all-solid-state Li batteries with LiTi2O4 epitaxial thin films

△ [19a-C102-8] Epitaxial growth and dimensionality-controlled MIT of Ruddlesden-Popper type Srn+1VnO3n+1 (001) thin films (n = 1, 2)

△ [19a-C102-9] High electrical conductivity in YbO epitaxial thin film with strong spin-orbit interaction

△ [19a-C102-10] Molecular beam epitaxy of superconducting Sr2RuO4 thin films

[20a-C102-1~12] 6.3 Oxide electronics

△ [20a-C102-4] Time response to the Pulse Gate Voltage in VO2–Channel Metal-Insulator Transition FET

△ [20a-C102-5] Control of the Metal–Insulator Transition in VO2 Thin Films by K Deposition

△ [20a-C102-9] Origins of spin depolarization in half-metal CrO2: High-resolution spin-resolved photoemission spectroscopy study

△ [20a-C102-10] Ferroelectric gate transistor operated by electric double layer

△ [20a-C102-11] Thin-film stabilization of ZnSnO3 and MgSnO3 by molecular-beam epitaxy

△ [20a-C102-12] Mechanism of charge transfer at heterointerfaces between perovsktite transition-metal oxides

[20p-C102-1~10] 6.3 Oxide electronics

[19p-P5-1~39] 6.3 Oxide electronics

▲ [19p-P5-2] Epitaxial growth of highly strained RuO2 thin film by self-buffering method

△ [19p-P5-10] Transport Properties of Ca2RuO4 Thin Films Grown by Solid-Phase Epitaxy in Atmospheric Pressure

▲ [19p-P5-23] Ionization potentials and electron affinities of amorphous Cd-In-Ga-O

△ [19p-P5-30] Enhanced photoelectrochemical activity of a La,Rh co-doped SrTiO3 photocathode

▲ [19p-P5-32] Fabrication of Perovskite Solar Cell with Thickness-defendant TiO2 Photoelectrode

△ [19p-P5-37] Development of a thin-film deposition system utilizing Bayesian optimization

△ [19p-P5-38] Fabrication of NaCrO2 epitaxial thin films using pulsed laser deposition

Authentication

△ [18a-C102-5] Analysis of photocarrier mobility in BaSnO₃ thin films

△ [18a-C102-7] Fabrication and structural characterization of mist CVD-grown SnO₂thin films on YSZ(100) substrates

▼ [18a-C102-9] Control of TiO₂ thin film density and mechanical properties by laser radiation.

△ [18p-C102-13] Conductivity Modulation in SrVO₃ Thin Films Achieved by All-Solid-State Redox Transistors

△ [18p-C102-15] Electrical characteristics of Pt/TiO₂/Pt using TiO₂ with various crystallinities

△ [18p-C102-16] Oxygen composition and thickness dependences of electrical characteristics in Ta₂O₅-based ReRAM

△ [19a-C102-3] Fabrication of oxide dots supported LiCoO₂ epitaxial thin film and their high-rate performance as a function of dot-type

△ [19a-C102-4] Fabrication of all-solid-state Li batteries with LiTi₂O₄ epitaxial thin films

△ [19a-C102-8] Epitaxial growth and dimensionality-controlled MIT of Ruddlesden-Popper type Sr_n₊₁V_nO_3n+1 (001) thin films (n = 1, 2)

△ [19a-C102-10] Molecular beam epitaxy of superconducting Sr₂RuO₄ thin films

△ [20a-C102-4] Time response to the Pulse Gate Voltage in VO₂–Channel Metal-Insulator Transition FET

△ [20a-C102-5] Control of the Metal–Insulator Transition in VO₂ Thin Films by K Deposition

△ [20a-C102-9] Origins of spin depolarization in half-metal CrO₂: High-resolution spin-resolved photoemission spectroscopy study

△ [20a-C102-11] Thin-film stabilization of ZnSnO₃ and MgSnO₃by molecular-beam epitaxy

▲ [19p-P5-2] Epitaxial growth of highly strained RuO₂ thin film by self-buffering method

△ [19p-P5-10] Transport Properties of Ca₂RuO₄ Thin Films Grown by Solid-Phase Epitaxy in Atmospheric Pressure

▲ [19p-P5-32] Fabrication of Perovskite Solar Cell with Thickness-defendant TiO₂ Photoelectrode

△ [19p-P5-38] Fabrication of NaCrO₂ epitaxial thin films using pulsed laser deposition