[19p-P5-1~39] 6.3 Oxide electronics

[19p-P5-15] Analysis of resistive switching mechanism in polycrystalline HfO₂ by using first-prinsiples calculation

〇(M1C)Sohta Hida¹, Takahiro Yamasaki², Jun Nara², Takahisa Ohno², Satoru Kishida^1,3, Kentaro Kinoshita⁴ (1.Tottori Univ., 2.NIMS, 3.TiFREC, 4.Tokyo Univ. of Science)

Keywords:ReRAM, HfO2, first principles calculation

We analyzed surface energies of the several orientations and effects of oxygen vacancies in polycrystalline HfO₂ that is used Resistive Random Access Memory (ReRAM) by using first-principles calculation. HfO₂ (110) has the lowest surface energy in surfaces vertical to the HfO₂ (-111), suggesting that HfO₂ (110) is the most possible diffusion and cohesion surface for oxygen vacancies. Oxygen vacancies are tend to be formed near the HfO₂ (110) surface and influence electric conduction in the surfaces. Therefore, oxygen vacancies cause resistive switching by diffusing and cohering in polycrystalline HfO₂.