The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[20p-C102-1~10] 6.3 Oxide electronics

Tue. Mar 20, 2018 1:45 PM - 4:30 PM C102 (52-102)

Miho Kitamura(KEK)

4:00 PM - 4:15 PM

[20p-C102-9] Magnetic Control of Electric Double Layer Transistor

Takashi Tsuchiya1, Masataka Imura1, Yasuo Koide1, Kazuya Terabe1 (1.NIMS)

Keywords:electric double layer transistor, nanionic devices, hydrogen terminated diamond

An electric double layer transistor (EDLT) containing hydrogen terminated diamond and [Bmim]FeCl4 magnetic electrolyte have been controlled by applying a magnetic field in contrast to the control of conventional field effect devices by an applied electric field. A magnetic field of several hundred mT generated by a small neodymium magnet is sufficient to operate the EDLT. Although it showed reversible drain current modulation with a magnetoresistance effect of 503%, it is not yet advantageous for practical application due to the poor performance at present. Magnetic control has unique and interesting characteristics that are advantageous for remote control of electrochemical behavior and is opening a door to new applications of electrochemical devices and related technologies.