[20p-C102-1~10] 6.3 Oxide electronics

[20p-C102-8] Electrostatic carrier doping on an infinite layer (Sr,La)CuO₂ thin film

Yukimasa Naganuma¹, Yumiko Katayama¹, 〇Kazunori Ueno¹ (1.Dept.Basic Sci., Univ. Tokyo)

Keywords:cuprate superconductor, electric double layer transistor, electrostatic carrier doping

Electrostatic carrier doping and electrochemical etching were simultaneously carried out on an electron-doped cuprate superconductor Sr_1-xLa_xCuO₂. Superconducting critical temperature T_c was decreased with decreasing film thickness below 25 nm. Application of positive gate bias induces negative carriers on the sample. As a result, resistance decreased and T_c was increased by 0.05 K. SInce the change in T_c was very small, charge carrier density plays minor role on electron doped cuprate supercondutor, contrasting to the large change in T_c in hole doped cuprate superconductors.