[19p-P5-1~39] 6.3 Oxide electronics

[19p-P5-19] Fabrication of Pt-Pd/(Y₂O₃-doped ZrO₂ single crystal thin film)/Pt-Pd structure with MEMS technology and its resistive switching properties

〇Koshi Futatsumori¹, Tadashi Shiota¹, Kunio Nishioka², Akihiro Matsutani², Masaru Tada³, Akio Nishiyama¹, Kazuo Shinozaki¹ (1.Tokyo tech, 2.micro,Tokyo tech, 3.Analysis,Tokyo tech)

Keywords:resistive switching memory, quantized conductance, MEMS technology