Ryutaro Nishino

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 9:00 AM - 12:15 PM C102 (52-102)

Oral presentation
| 6 Thin Films and Surfaces
| 6.3 Oxide electronics

[20a-C102-1~12] 6.3 Oxide electronics

11:30 AM - 11:45 AM

△ [20a-C102-10] Ferroelectric gate transistor operated by electric double layer

〇Ryutaro Nishino¹, Yusuke Kozuka¹, Fumitaka Kagawa^1,2, Masaki Uchida¹, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS)