Effective resistance modulation in a VO<sub>2</sub> FET with hBN as a gate insulator

Yuto Anzai; Mahito Yamamoto; Teruo Kanki; Kenji Watanabe; Takashi Taniguchi; Kazuhiko Matsumoto; Hidekazu Tanaka

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[20a-C102-1~12] 6.3 Oxide electronics

Tue. Mar 20, 2018 9:00 AM - 12:15 PM C102 (52-102)

Akira Chikamatsu(Univ. of Tokyo)

9:15 AM - 9:30 AM

[20a-C102-2] Effective resistance modulation in a VO₂ FET with hBN as a gate insulator

〇(M1)Yuto Anzai¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Kazuhiko Matsumoto¹, Hidekazu Tanaka¹ (1.ISIR Osaka Univ., 2.NIMS)

Keywords:Strongly correlated material, Hetero structure

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Presentation information

[20a-C102-1~12] 6.3 Oxide electronics

[20a-C102-2] Effective resistance modulation in a VO2 FET with hBN as a gate insulator

[20a-C102-2] Effective resistance modulation in a VO₂ FET with hBN as a gate insulator