[20a-C102-1~12] 6.3 Oxide electronics

[20a-C102-1] Growth and characterization of VO₂ thin films on hexagonal boron nitride

〇Shingo Genchi¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)

Keywords:metal-insulator-insulator, vanadium dioxide, hexagonal boron nitride

Vanadium dioxide (VO₂) shows metal-insulator-transition (MIT) with orders of magnitude resistivity changes around room temperature. Previously, oxides which don’t have large lattice mismatch have been used as substrates to grow VO₂ on. In order to open the possibility for VO₂ in various device applications, we investigated the growth of VO₂ thin films on hexagonal boron nitride (hBN), on which the lattice mismatch might be ignorable. As a result, we confirmed that VO₂ can be grown on hBN. This result opens the possibility of not only the VO₂ device applications but also the growth of VO₂ on other layered materials.