Influence of gate metals on Al2O3/NO2 hole doped diamond MOS structure studied by C-V measurements

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

4:15 PM - 4:30 PM

Niloy Chandra Saha¹, 〇Makoto Kasu¹ (1.Saga Univ.)

Keywords:C-V, Diamond MOS, Gate metal

In this work, influence of different gate metals on Al₂O₃/NO₂/H-diamond metal-oxide-semiconductor (MOS) will be investigated.