Diamond Field-Effect Transistors Fabricated on High-Quality Heteroepitaxial Wafer with Micro-Needle Technology

Makoto Kasu; Naru Fukami; Yuma Ishimatsu; Satoshi Masuya; Toshiyuki Oishi; Daiki Fujii; Seong-woo Kim

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

4:00 PM - 4:15 PM

[18p-C302-9] Diamond Field-Effect Transistors Fabricated on High-Quality Heteroepitaxial Wafer with Micro-Needle Technology

〇Makoto Kasu¹, Naru Fukami¹, Yuma Ishimatsu¹, Satoshi Masuya¹, Toshiyuki Oishi¹, Daiki Fujii², Seong-woo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:diamond

Diamond Field-Effect Transistors were Fabricated on High-Quality Heteroepitaxial Wafer with Micro-Needle Technology