Diamond Schottky barrier diode RF-DC conversion circuits with high voltage ratio

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

4:30 PM - 4:45 PM

Naru Fukami¹, Kousuke Ajiro¹, 〇Toshiyuki Oishi¹, Naoshi Kawano¹, Koji Araki¹, Satoshi Masuya¹, Makoto Kasu¹ (1.Saga Univ.)

Keywords:Diamond, Schottkiy barrier diode, RF-DC conversion circuit

ダイヤモンドショットキーバリアダイオード単体の容量・抵抗積の面積依存性を検討，CR積の小さいSBDでRF-DC変換(デュアルダイオード)回路を作製し，入力と出力の電圧比が高いRF-DC変換特性を実現した．