Toshiyuki Oishi

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

4:30 PM - 4:45 PM

[18p-C302-11] Diamond Schottky barrier diode RF-DC conversion circuits with high voltage ratio

Naru Fukami¹, Kousuke Ajiro¹, 〇Toshiyuki Oishi¹, Naoshi Kawano¹, Koji Araki¹, Satoshi Masuya¹, Makoto Kasu¹ (1.Saga Univ.)

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

5:30 PM - 5:45 PM

[19p-C302-15] Study on effect of trap lifetime to pulse response of GaN HEMT by TCAD

Kousuke Ajiro¹, 〇Toshiyuki Oishi¹ (1.Saga Univ.)