[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

▲ [18p-C302-19] Current Aperture Vertical Ga₂O₃ MOSFETs with N-Ion-Implanted Current Blocking Layer

〇ManHoi Wong¹, Ken Goto^2,3, Akito Kuramata², Shigenobu Yamakoshi², Hisashi Murakami³, Yoshinao Kumagai³, Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp., 3.Tokyo Univ. Agricul. Technol.)

Keywords:Ga2O3, vertical MOSFET, ion implantation

Vertical power transistors are preferred over their lateral counterparts since chip area utilization is more efficient and device operation is insensitive to surface effects. A current aperture vertical Ga₂O₃ MOSFET was previously demonstrated, wherein the source was isolated from the drain by an Mg-doped current blocking layer (CBL) except at an aperture opening through which drain current was conducted. In this work, an N-doped CBL was adopted for transistor fabrication in light of its higher thermal stability and larger blocking voltage than with Mg doping.