[18p-C302-1~19] 13.7 化合物及びパワー電子デバイス・プロセス技術

▲ [18p-C302-19] Current Aperture Vertical Ga₂O₃ MOSFETs with N-Ion-Implanted Current Blocking Layer

〇ManHoi Wong¹、Ken Goto^2,3、Akito Kuramata²、Shigenobu Yamakoshi²、Hisashi Murakami³、Yoshinao Kumagai³、Masataka Higashiwaki¹ (1.NICT、2.Tamura Corp.、3.Tokyo Univ. Agricul. Technol.)

キーワード：Ga2O3, vertical MOSFET, ion implantation

Vertical power transistors are preferred over their lateral counterparts since chip area utilization is more efficient and device operation is insensitive to surface effects. A current aperture vertical Ga₂O₃ MOSFET was previously demonstrated, wherein the source was isolated from the drain by an Mg-doped current blocking layer (CBL) except at an aperture opening through which drain current was conducted. In this work, an N-doped CBL was adopted for transistor fabrication in light of its higher thermal stability and larger blocking voltage than with Mg doping.