The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

2:30 PM - 2:45 PM

△ [18p-C302-4] Effects of high-temperature annealing on Al2O3/GaN interface properties

〇Tatsuya Oyobiki1, Tamotsu Hashizume1 (1.RCIQE. Hokkaido Univ.)

Keywords:GaN, High-temperature annealing