[18p-C304-1~11] Ge Technology - Electron / Photon / Phonon / Spin - Innovation of Group-IV Semiconductors -

[18p-C304-10] Transport Control of Electron and Phonon by nanostructuring of Si-based semiconductors for application to thermoelectric materials

〇Yoshiaki Nakamura¹ (1.Osaka Univ.)

Keywords:thermoelectric material, nanostructure, molecular beam epitaxy

To develop materials with high electrical conductivity and low thermal conductivity has been a vital goal for the realization of high performance thermoelectric materials. Recently, nanostructuring has drawn much attention because nanostructures reduce thermal conductivity drastically due to the phonon interface scattering. However, there is a possibility that carriers are also scattered at the interfaces resulting in degrading the mobility. In this presentation, we will introduce the silicon-based films including epitaxial nanodots that were developed for reducing the thermal conductivity while preserving high electrical conductivity.