[18p-C304-1~11] Ge Technology - Electron / Photon / Phonon / Spin - Innovation of Group-IV Semiconductors -

[18p-C304-2] Interfacing field control of germanium for electron device applications

〇Akira Toriumi¹ (1.Univ. Tokyo)

Keywords:Germanium

In recent advanced FETs, the interface control is the key, and will become much more important in comimng future. In actual devies, there are many kinds of interfaces. In this talk, following three kinds of interfaces which are the most important in FETs will be discussed. (i) Ge/insulator, (ii) Ge/metal, and pn junction interfaces. If we can make the best of Ge advantages as we want, Ge will be used together with Si technology. For this goal, fundamental understanding of those interfaces is now strongly desired.