[18p-C304-1~11] Ge Technology - Electron / Photon / Phonon / Spin - Innovation of Group-IV Semiconductors -

[18p-C304-3] High Density Formation of Si-Ge Based Core-Shell Quantum Structures and Control of Their Optical and Electronic Properties

〇Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:semiconductor quantum dots, Si, Ge

In this talk, our recent achievements on high-density formation and characterization of Si-quantum dots with Ge core, Si/Ge QDs, on ultrathin SiO₂ will be reviewed. Based on systematic study of the influences of embedding Ge core in Si-QDs and phosphorus doping to Ge core on photoluminescence properties, the origin and its mechanism of radiative recombination in Si/Ge QDs will be discussed. And also, photoluminescence properties of Si/Ge QDs generated in near-infrared region by both simultaneous and alternate injections of electrons and holes will be shown.