[18p-D101-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18p-D101-3] Effects of Crystal Growth Conditions of n-type Cz-Si on Oxygen Precipitation through Annealing Process Evaluated by IR Light Scattering Tomography

〇(M1)Kousuke Kinoshita¹, Takuto Kojima¹, Yoshio Ohshita², Atsushi Ogura¹ (1.Meiji University, 2.Toyota Tech. Inst.)

Keywords:Crystalline silicon solar cell, Crystal growth, Precipitation

Since n-type mono crystalline Si has longer of carrier lifetime than p-type, it is expected to be applied to the next-generation solar cells. Oxygen is incorporated with high concentration and precipitated in Si crystals during Cz growth and annealing processes. It is known that oxygen precipitation introduce strain as they grow and cause reduction in solar cell efficiency. Carbon is also involved in the growth of oxygen precipitates, and it has been reported that there is a clear correlation between carbon concentration and precipitation density. Therefore, it is important to understand the influence of carbon on the oxygen precipitation for improving the solar cell efficiency. In this study, wafers with different carbon concentrations were prepared, and the changes in the density and size of oxygen precipitates due to annealing process were evaluated by infrared light scattering tomography (IR - LST).