[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-11] Dependence of oxygen on dislocation density in Si single crystal for solar cells during solidification and cooling process

Tomoro Ide¹, 〇Satoshi Nakano², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

Keywords:dislocation

Dislocation is one of the main factor to decrease conversion efficiency for Si single crystal for solar cells. It has been reported that oxygen atoms in Si single crystal decrease velocity of dislocation motion and restrain dislocation multiplication under low stress. In this study, we investigated the relation between oxygen atoms in the Si single crystal and dislocation multiplication during solidification and cooling process by numerical analysis.