[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-12] Origin of Room-Temperature Photoluminescence around C-line in Electron-Irradiated Si

〇Michio Tajima¹, Kiuchi Hirotatsu¹, Yoichiro Ishikawa¹, Atsushi Ogura¹ (1.Meiji Univ.)

Keywords:silicon, photoluminescence, carbon impurity

Photoluminescence (PL) activation method using electron irradiation has attracted considerable attention to quantify low-level C in Si crystals. The PL measurement has so far been performed at liquid He and liquid N temperatures. We demonstrate that the deep-level emission band is observable even at room temperature in the vicinity of the C-related C-line detected at low temperatures. The band is most probably due to C and its application to the C quantification is discussed.