Evaluation of Si fast recovery diode by multifunctional scanning probe microscope

Hidekazu Yamamoto; Takeshi Uruma; Nobuo Satoh; Futoshi Iwata

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

5:45 PM - 6:00 PM

[18p-D103-17] Evaluation of Si fast recovery diode by multifunctional scanning probe microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma², Nobuo Satoh¹, Futoshi Iwata² (1.Chiba Inst. of Tech., 2.Graduate School of Sci. and Tech., Shizuoka Univ.)

Keywords:Power device, Si, Multifunctional scanning probe microscope

We evaluate Si fast recovery diode by multifunctional scanning probe microscope. The forward and reverse bias are added. The surface voltege measurement under current flow is realized for the first time.