[18p-D103-1~23] 15.7 結晶評価，不純物・結晶欠陥

[18p-D103-17] Evaluation of Si fast recovery diode by multifunctional scanning probe microscope

〇Hidekazu Yamamoto¹、Takeshi Uruma²、Nobuo Satoh¹、Futoshi Iwata² (1.Chiba Inst. of Tech.、2.Graduate School of Sci. and Tech., Shizuoka Univ.)

キーワード：Power device, Si, Multifunctional scanning probe microscope

We evaluate Si fast recovery diode by multifunctional scanning probe microscope. The forward and reverse bias are added. The surface voltege measurement under current flow is realized for the first time.