Evaluation of SiC-Schottky barrier diode by multifunctional scanning probe microscope

Yuuki Uchida; Takanori Ikarashi; Katsumi Kokumai; Mizuki Nakajima; Nobuo Satoh; Hidekazu Yamamoto

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

6:00 PM - 6:15 PM

[18p-D103-18] Evaluation of SiC-Schottky barrier diode by multifunctional scanning probe microscope

〇Yuuki Uchida¹, Takanori Ikarashi¹, Katsumi Kokumai¹, Mizuki Nakajima¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

Keywords:SiC, Schotokky barier diode, multifunctional scanning probe microsope

In recent years, silicon carbide (SiC) has attracted attention and SiC devices are being manufactured.
Therefore, we are evaluating various power devices by multifunctional scanning probe microscope.
We evaluated SiC-SBD at forward bias and reverse bias this time.