The 65h JSAP Spring Meeting, 2018

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

6:15 PM - 6:30 PM

[18p-D103-19] Stress Characterization of SiO2 / SiC interface by Scanning Near-Field Optical Raman Microscope

〇Masataka Murakami1, Yasuhiko Fujita1 (1.Toray Research Center)

Keywords:Silicon Carbide, SiC, stress

In order to characterize the residual stresses in SiO2 / SiC interface, the scanning near-field optical Raman microscope with the nanometer-scale resolution has been utilized. The tensile stress exists in the SiC up to 300 nm form the SiO2 interface. The residual tensile stress due to the difference of the thermal expansion coefficients between SiO2 and SiC is estimated to be about 55 MPa.