[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-3] Characteristic of Molecular Ion Implanted Epitaxial Wafers (3)
- Annealing Behavior of Hydrogen Trapped Implantation related defects using RTA -

〇TAKESHI KADONO¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:molecular ion implantation, hydrogen, oxygen

The annealing behavior of hydrogen and oxygen in implantation projection range of C₃H₅ cluster ion implantation were investigated for high-quality complementary metal-oxide-semiconductor (CMOS) image sensors. Recently, we revealed that a high dose amounts condition of C₃H₅ cluster ion implantation formed not only carbon related defects but also amorphous related defects.
In this work, we focus on the two types of defects, and evaluated trapping behavior of hydrogen and oxygen after RTA (Rapid thermal annealing). As a result, the amorphous related defects trap high concentration of hydrogen and oxygen. Therefore, we suggest that the characteristics of C₃H₅ cluster ion implanted epitaxial wafer improve.