[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-2] Characteristic of Molecular Ion Implanted Epitaxial Wafers (2)
-Dissociation and Association Behavior Kinetic of Hydrogen in CH₂P Cluster Projection Range-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:hydrogen, molecular ion implantation

The association and dissociation behavior of hydrogen in the projection range of a CH₂P cluster were investigated for high-performance complementary metal-oxide-semiconductor (CMOS) image sensors. The two hydrogen peaks of the CH₂P cluster were observed after epitaxial growth and heat treatment. Understanding the properties of the hydrogen behavior in the projection range of CH₂P cluster ion implantation is important to both applied and fundamental material science. Therefore, the hydrogen in the CH₂P cluster projection range is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical characteristics.