[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-D103-1] Characteristics of Molecular Ion Implanted Epitaxial Wafers (1) - A study of CH₂P ion implanted silicon epitaxial wafers-

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Satoshi Shigematsu¹, Kouji Kobayashi¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:molecular ion implantation, gettering technique, Cluster ion implantation

For the purpose of improving the characteristics of the CMOS image sensor, we are developing silicon epitaxial wafers using ion implantation technology typified by carbon cluster ion implantation technology. In the 78th JSAP Fall Meeting, we reported a new molecular ion implantation technique consist of carbon, hydrogen and phosphorus. In this report, we will report the basic characteristics of silicon epitaxial wafer to which this molecular ion implantation.