Characteristic of Molecular Ion Implanted Epitaxial Wafers (4) -A Study of Recrystallization of Implantation-related Defect Using Flash Lamp Annealing-

kouji kobayashi; Ryosuke Okuyama; Ayumi Masada; Satoshi Shigematsu; Ryo Hirose; Yoshihiro Koga; Hidehiko Okuda; Kazunari Kurita

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

2:00 PM - 2:15 PM

△ [18p-D103-4] Characteristic of Molecular Ion Implanted Epitaxial Wafers (4) -A Study of Recrystallization of Implantation-related Defect Using Flash Lamp Annealing-

〇kouji kobayashi¹, Ryosuke Okuyama¹, Ayumi Masada¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:gettering, Carbon-cluster, anneal

Carbon-cluster ion implanted epitaxial wafers achieve high metal gettering capability with high dose implantation. However amorphization are occured near surface of substrate and epitaxial defects are formed during epitaxial growth under high dose implantation. Therefore, flash lamp annealing is performed to control recrystallization amorphous layer and defects formation.