The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

2:45 PM - 3:00 PM

[18p-D103-7] Investigation for oxygen precipitation model in ultra-high temperature RTP wafers

〇Susumu Maeda1, Haruo Sudo1, Hideyuki Okamura1, Kozo Nakamura3, Koji Sueoka2 (1.Base Technology, Technology, GlobalWafers Japan Co., Ltd., 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

Keywords:Silicon, Rapid Thermal Process, Oxygen precipitation