Formation behavior of oxygen precipitates in ultra-high temperature RTP wafers

Haruo Sudo; Hideyuki Okamura; Susumu Maeda; Tatsuhiko Aoki; Kozo Nakamura; Koji Sueoka

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

2:30 PM - 2:45 PM

[18p-D103-6] Formation behavior of oxygen precipitates in ultra-high temperature RTP wafers

〇Haruo Sudo¹, Hideyuki Okamura¹, Susumu Maeda¹, Tatsuhiko Aoki¹, Kozo Nakamura³, Koji Sueoka² (1.Base Technology, Technology, GlobalWafers Japan Co., Ltd., 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

Keywords:Silicon, Rapid Thermal Process, Oxygen Precipitation