[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-D103-5] Characteristic of Molecular Ion Implaned Epitaxial Wafers (5)
-Getering Behavior Analysis of Implantation-related Defects in CH₃O Ion Implanted Wafers Using Atom Probe Tomography-

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Takeshi Kadono¹, Koji Kobayashi¹, Ayumi Masada¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:gettering, atom probe, ion implantation

We have developed molecular ion implanttation technique composed carbon, hydrogen, and oxygen to fabricate high performance CMOS image sensors. This technique forms (111) expanded stacking fault. We clarified that multiple type impurities were gettered arond this defects like rosary. Cottrell model cannnot explain this result. We will report the detail of gettering behavior of the defects.