The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-E201-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 18, 2018 1:45 PM - 5:15 PM E201 (57-201)

Norifumi Fujimura(Osaka Pref. Univ.), Hisao Makino(Kochi Univ. of Tech.)

3:00 PM - 3:15 PM

[18p-E201-6] Preparation of dielectric distributed Bragg reflectors by the reactive helicon-wave-excited-plasma sputtering method (1)

〇(B)Takumi Kasuya1,2, Kohei Shima1, Kiyoshi Kikuchi1, Kazunobu Kojima1,2, Shigefusa Chichibu1,2 (1.IMRAM-Tohoku Univ., 2.Dept. Appl. Phys.-Tohoku Univ.)

Keywords:Reactive helicon-wave-excited-plasma sputtering method, Distributed Bragg reflectors, ZrO2

反応性ヘリコン波励起プラズマスパッタ法を用いて形成した誘電体分布ブラッグ反射鏡(DBR)について、誘電体膜のRMS粗さがDBRの反射率に与える影響について報告する。