The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E202-1~22] 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 1:15 PM - 7:30 PM E202 (57-202)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Hajime Fujikura(SCIOCS)

5:15 PM - 5:30 PM

[18p-E202-15] Low temperature growth of GaN by reactive sputtering

Masanori Shirai1, Takuji Yamamoto1, Satoru Takasawa1, Satoru Ishibashi1 (1.ULVAC,Inc.)

Keywords:GaN, Sputtering, Low temperature

反応性スパッタ法によるGaNの低温成長について、下地となる基板とGaNの成長状態に関する考察を行う。